1 ? fn4227.2 hs-1145rh radiation hardened, high speed, low power, current feedback video operational amplifier with output disable the hs-1145rh is a high speed, low power current feedback amplifier built with intersil?s proprietary complementary bipolar uhf-1 (di bonded wafer) process. these devices are qml approved and are processed and screened in full compliance with mil-prf-38535. this amplifier features a tt l/cmos compatible disable control, pin 8, which when pulled low, reduces the supply current and forces the output in to a high impedance state. this allows easy implementation of simple, low power video switching and routing system s. component and composite video systems also bene fit from this op am p?s excellent gain flatness, and good differential gain and phase specifications. multiplexed a/d applications will also find the hs-1145rh useful as the a/d driver/multiplexer. specifications for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical specifications for these devices are contained in smd 5962-96830. features ? electrically screened to smd # 5962-96830 ? qml qualified per mil-prf-38535 requirements ? low supply current . . . . . . . . . . . . . . . . . . . . 5.9ma (typ) ? wide -3db bandwidth. . . . . . . . . . . . . . . . . 360mhz (typ) ? high slew rate . . . . . . . . . . . . . . . . . . . . .1000v/ s (typ) ? excellent gain flatness (to 50mhz). . . . . . 0.07db (typ) ? excellent differential gain . . . . . . . . . . . . . . . 0.02% (typ) ? excellent differential phase . . . . . . . . 0.03 degrees (typ) ? high output current . . . . . . . . . . . . . . . . . . . 60ma (typ) ? output enable/disable time . . . . . . . . . 180ns/35ns (typ) ? total gamma dose . . . . . . . . . . . . . . . . . . . 300krad(si) ? latch up. . . . . . . . . . . . . . . . . . . . . none (di technology) applications ? multiplexed flash a/d driver ? rgb multiplexers/preamps ? video switching and routing ? pulse and video amplifiers ? wideband amplifiers ? rf/if signal processing ? imaging systems pinout hs-1145rh gdip1-t8 (cerdip) or cdip2-t8 (sbdip) top view ordering information ordering number internal mkt. number temp. range (c) 5962f9683001vpc hs7b-1145rh-q -55 to 125 nc -in +in v- 1 2 3 4 8 7 6 5 disable v+ out nc + - data sheet february 14, 2005 caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-352-6832 | intersil (and design) is a registered trademark of intersil americas inc. copyright intersil americas inc. 1999, 2005. all rights reserved all other trademarks mentioned are the property of their respective owners.
2 fn4227.2 february 14, 2005 application information optimum feedback resistor although a current feedback amplifier?s bandwidth dependency on closed loop gain isn?t as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. this decrease may be minimized by taking advantage of the current feedback amplifier?s unique relationship between bandwidth and r f . all current feedback amplifiers require a feedback resistor, even for unity gain applications, and r f , in conjunction with the internal compensation capac itor, sets the dominant pole of the frequency response. thus, the amplifier?s bandwidth is inversely proportional to r f . the hs-1145rh design is optimized for r f = 510 ? at a gain of +2. decreasing r f decreases stability, resulting in excessive peaking and overshoot (note: capacitive feedback will cause the same problems due to the feedback impedance decrease at higher frequencies). at higher gains, how ever, the amplifier is more stable so r f can be decreased in a trade-off of stability for bandwidth. the table below lists recommended r f values for various gains, and the expected bandwidth. for a gain of +1, a resistor ( + r s ) in series with +in is required to reduce gain peaking and increase stability. non-inverting input source impedance for best operation, the dc source impedance seen by the non-inverting input should be 50 ?. this is especially important in inverting gain co nfigurations where the non- inverting input would normally be connected directly to gnd. disable input ttl compatibility the hs-1145rh derives an internal gnd reference for the digital circuitry as long as the power supplies are symmetrical about gnd. with symmetrical supplies the digital switching threshold (v th = (v ih + v il )/2 = (2.0 + 0.8)/2) is 1.4v, which ensures the ttl compatibility of the disable input. if asymmetrical supplies (e.g., +10v, 0v) are utilized, the switching threshold becomes: and the v ih and v il levels will be v th 0.6v, respectively. optional gnd pad (die use only) for ttl compatibility the die version of the hs-11 45rh provides the user with a gnd pad for setting the disable circuitry gnd reference. with symmetrical supplies the gnd pad may be left unconnected, or tied directly to gnd. if asymmetrical supplies (e.g., +10v, 0v) are utilized, and ttl compatibility is desired, die users must c onnect the gnd pad to gnd. with an external gnd, the disable input is ttl compatible regardless of supply voltage utilized. pulse undershoot and asymmetrical slew rates the hs-1145rh utilizes a qu asi-complementary output stage to achieve high output current while minimizing quiescent supply current. in this approach, a composite device replaces the traditiona l pnp pulldown transistor. the composite device switches modes after crossing 0v, resulting in added distortion for signals swinging below ground, and an increased undershoot on the negative portion of the output waveform (see figures 5, 8, and 11). this undershoot isn?t present for small bipolar signals, or large positive signals. another artifact of the composite device is asymmetrical slew rates for output signals with a negative voltage component. the slew rate degrades as the output signal crosses through 0v (see figures 5, 8, and 11), resulting in a slower overall negative slew rate. positive only signals have symmetrical slew rates as illustrated in the large signal positive pulse res ponse graphs (see figures 4, 7, and 10). pc board layout this amplifier?s frequency res ponse depends greatly on the care taken in designing the pc board. the use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! attention should be given to decoupling the power supplies. a large value (10 f) tantalum in parallel with a small value (0.1 f) chip capacitor works well in most cases. terminated microstrip signal lines are recommended at the device?s input and output connections. capacitance, parasitic or planned, connected to the output must be minimized, or isolated as discussed in the next section. care must also be taken to minimize the capacitance to ground at the amplifier?s inverting input (-in), as this capacitance causes gain peaki ng, pulse overshoot, and if large enough, instability. to reduce this capacitance, the designer should remove the ground plane under traces connected to -in, and keep co nnections to -in as short as possible. an example of a good high frequency layout is the evaluation board shown in figure 2. gain (a cl ) r f ( ? ) bandwidth (mhz) -1 425 300 +1 510 (+r s = 510 ? ) 270 +2 510 330 +5 200 300 +10 180 130 v th v+ v- + 2 ------------------- 1.4v + = hs-1145rh
3 fn4227.2 february 14, 2005 driving capacitive loads capacitive loads, such as an a/d input, or an improperly terminated transmission line will degrade the amplifier?s phase margin resulting in frequency response peaking and possible oscillations. in most cases, the osci llation can be avoided by placing a resistor (r s ) in series with the output prior to the capacitance. figure 1 details starting points for the selection of this resistor. the points on the curve indicate the r s and c l combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. r s and c l form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 270mhz (for a v = +1). by decreasing r s as c l increases (as illustrated in the curves ), the maximum bandwidth is obtained without sacrificing stab ility. in spite of this, the bandwidth decreases as the lo ad capacitance increases. for example, at a v = +1, r s = 62 ? , c l = 40pf, the overall bandwidth is limited to 180mhz, and bandwidth drops to 75mhz at a v = +1, r s = 8 ? , c l = 400pf. evaluation board the performance of the hs- 1145rh may be evaluated using the hfa11xx evaluation board. the layout and schematic of t he board are shown in figure 2. the v h connection may be used to exercise the disable pin, but note that this connection has no 50 ? termination. to order evaluation boards (part number hfa11xxeval), please contact your local sales office. 0 100 200 300 400 0 10 20 30 40 50 load capacitance (pf) series output resistance ( ? ) a v = +1 150 250 350 50 figure 1. recommended series output resistor vs load capacitance a v = +2 figure 2a. top layout figure 2b. bottom layout figure 2c. schematic figure 2. evaluation board schematic and layout v h +in v l v+ gnd 1 v- out 1 2 3 4 8 7 6 5 +5v 10 f 0.1 f v h 50 ? gnd gnd r 1 -5v 0.1 f 10 f 50 ? in out v l 510 510 hs-1145rh
4 fn4227.2 february 14, 2005 typical performance curves v supply = 5v, r f = 510 ? , t a = 25 o c, r l = 100 ? , unless otherwise specified figure 3. small signal pulse response figur e 4. large signal positive pulse response figure 5. large signal bipolar pulse respo nse figure 6. small signal pulse response figure 7. large signal positive pulse response f igure 8. large signal bipolar pulse response 5ns/div. output voltage (mv) 200 150 100 50 0 -50 -100 -150 -200 a v = +1 +r s = 510 ? 5ns/div. output voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 a v = +1 +r s = 510 ? 5ns/div. output voltage (v) 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 a v = +1 +r s = 510 ? output voltage (mv) 200 150 100 50 0 -50 -100 -150 -200 5ns/div. a v = +2 output voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 5ns/div. a v = +2 a v = +2 5ns/div. output voltage (v) 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 hs-1145rh
5 fn4227.2 february 14, 2005 figure 9. small signal pulse response figur e 10. large signal positive pulse response figure 11. large signal bipolar pulse response f igure 12. output enable and disable response figure 13. frequency response figure 14. frequency response typical performance curves v supply = 5v, r f = 510 ? , t a = 25 o c, r l = 100 ? , unless otherwise specified (continued) output voltage (mv) 200 150 100 50 0 -50 -100 -150 -200 5ns/div. a v = +10 r f = 180 ? 5ns/div. output voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 a v = +10 r f = 180 ? 5ns/div. output voltage (v) 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 a v = +10 r f = 180 ? 50ns/div. a v = +1, v in = 1v disable 800mv/div. (0.4v to 2.4v) out 400mv/div. 0v 3 0 -3 0.3 1 10 100 500 270 180 90 0 a v = +1 frequency (mhz) gain (db) normalized phase (degrees) a v = -1 a v = -1 a v = +1 v out = 200mv p-p +r s = 510 ? (+1) +r s = 0 ? (-1) 3 0 -3 0.3 1 10 100 500 270 180 90 0 frequency (mhz) normalized gain (db) phase (degrees) a v = +2 a v = +10 a v = +2 a v = +5 a v = +10 a v = +5 v out = 200mv p-p r f = 510 ? (+2) r f = 200 ? (+5) r f = 180 ? (+10) hs-1145rh
6 fn4227.2 february 14, 2005 figure 15. frequency response for various output voltages figure 16. full power bandwidth figure 17. frequency response for various load resistors figure 18. -3db bandwidth vs temperature figure 19. gain flatness figure 20. off isolation typical performance curves v supply = 5v, r f = 510 ? , t a = 25 o c, r l = 100 ? , unless otherwise specified (continued) a v = +2 3 0 -3 0.3 1 10 100 500 270 180 90 0 frequency (mhz) gain (db) phase (degrees) v out = 1.5v p-p v out = 200mv p-p v out = 5v p-p v out = 5v p-p v out = 200mv p-p v out = 1.5v p-p v out = 4v p-p (+1) v out = 5v p-p (-1, +2) +r s = 510 ? (+1) 3 0 -3 gain (db) 1 10 100 200 frequency (mhz) a v = -1 a v = +1 a v = +2 r l = 1k ? r l = 500 ? r l = 50 ? r l = 100 ? r l = 50 ? r l = 100 ? r l = 1k ? r l = 500 ? 3 0 -3 0.3 1 10 100 500 270 180 90 0 frequency (mhz) gain (db) phase (degrees) v out = 200mv p-p a v = +2 -100 -50 0 50 100 150 0 100 200 300 400 500 temperature ( o c) bandwidth (mhz) a v = +2 a v = +1 a v = +10 v out = 200mv p-p r f = 180 ? (+10) +r s = 510 ? (+1) 0.25 0.20 0.15 0.10 0.05 0 -0.05 -0.10 11075 v out = 200mv p-p +r s = 510 ? (+1) frequency (mhz) gain (db) a v = +2 a v = +1 a v = +2 v in = 1v p-p -30 -40 -50 -60 -70 -80 -90 0.3 1 10 100 frequency (mhz) off isolation (db) hs-1145rh
7 fn4227.2 february 14, 2005 figure 21. reverse isolation figure 22. enabled output impedance figure 23. settling response figure 24. second harmonic distortion vs p out figure 25. third harmonic distortion vs p out figure 26. output voltage vs temperature typical performance curves v supply = 5v, r f = 510 ? , t a = 25 o c, r l = 100 ? , unless otherwise specified (continued) -40 -50 -60 -70 -80 -90 0.3 1 10 100 frequency (mhz) reverse isolation (db) v out = 2v p-p a v = +1, +2 a v = -1 1k 100 10 1 0.1 0.01 0.3 1 10 100 frequency (mhz) 1000 output impedance ( ? ) a v = +2 0.8 0.6 0.4 0.2 0.1 0 -0.2 -0.4 -0.6 -0.8 3 8 13 18 23 28 33 38 43 48 a v = +2 v out = 2v time (ns) settling error (%) -5 0 5 10 15 -70 -60 -50 -40 -30 output power (dbm) distortion (dbc) a v = +2 20mhz 10mhz -5 0 5 10 15 -70 -60 -50 -40 -30 output power (dbm) distortion (dbc) a v = +2 2 0 m h z 1 0 m h z 3.6 3.5 3.4 3.3 3.2 3.1 2.9 2.8 2.7 2.6 -50 -25 0 25 50 75 100 125 temperature ( o c) output voltage (v) 3.0 +v out (r l = 100 ? ) |-v out | (r l = 100 ? ) a v = -1 +v out (r l = 50 ? ) |-v out | (r l = 50 ? ) hs-1145rh
8 fn4227.2 february 14, 2005 burn-in circuit hs-1145rh cerdip notes: 1. r1 = 1k ? , 5% (per socket) 2. r2 = 10k ? , 5% (per socket) 3. c1 = 0.01 f (per socket) or 0.1 f (per row) minimum 4. d1 = 1n4002 or equivalent (per board) 5. d2 = 1n4002 or equivalent (per socket) 6. v+ = +5.5v 0.5v 7. v- = -5.5v 0.5v irradiation circuit hs-1145rh cerdip notes: 8. r1 = 1k ? , 5% 9. r2 = 10k ? , 5% 10. c1 = c2 = 0.01 f 11. v+ = +5.0v 0.5v 12. v- = -5.0v 0.5v figure 27. input noise characteristics fig ure 28. supply current vs supply voltage typical performance curves v supply = 5v, r f = 510 ? , t a = 25 o c, r l = 100 ? , unless otherwise specified (continued) 100 10 1 0.1 1 10 100 100 10 1 frequency (khz) noise voltage (nv/ hz ) noise current (pa/ hz ) i ni- e ni i ni+ 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 5.6 5.7 5.8 5.9 6.0 6.1 power supply voltage ( v) power supply current (ma) 1 2 3 4 8 7 6 5 v+ c1 d1 d1 c1 v- d2 d2 r2 r1 r1 + - 1 2 3 4 8 7 6 5 v+ c1 c2 v- r2 r1 r1 + - hs-1145rh
9 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications ca n be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corpor ation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com fn4227.2 february 14, 2005 die characteristics die dimensions: 59 mils x 59 mils x 14 mils 1 mil (1500 m x 1500 m x 483 m 25.4 m) interface materials: glassivation: type: nitride thickness: 4k ? 0.5k ? top metallization: type: metal 1: aicu(2%)/tiw thickness: metal 1: 8k ? 0.4k ? type: metal 2: aicu(2%) thickness: metal 2: 16k ? 0.8k ? substrate: uhf-1, bonded wafer, di assembly related information: substrate potential: floating (recommend connection to v-) additional information: transistor count: 75 metallization mask layout hs-1145rh note: this pad is not bonded out on pa ckaged units. die users may set a gnd reference, via this pad, to ensure the ttl compatibi lity of the dis input when using asymmetrical su pplies (e.g. v+ = 10v, v- = 0v). see the ?a pplication information? section for details. v- optional gnd (note) out +in -in v+ disable hs-1145rh
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